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Unformatted text preview: EEE 352—Fall 2009 Homework 9 11.32 Consider an n-channel MOSFET with the same parameters as given in Prob. 11.30 except that V T = -2.0 V. (a) Plot I D vs. V DS for 0 ≤ V DS ≤ 5 V and for V GS = -2, -1, 0, +1, +2 V. (b) Plot sqrt(I DS,sat ) versus V GS for -2 ≤ V GS ≤ +3 V. The basic equation for the ideal MOSFET is . The coefficient in front is (a) 0.001 0.002 0.003 0.004 0.005 0.006 1 2 3 4 5 VGS=-2 VGS=-1 VGS=0 VGS=1 VGS=2 I DS (A) V DS (V) (b) 0.02 0.04 0.06 0.08 0.1-2-1 1 2 3 SQRT(I DS,SAT ) V GS (V) 11.35 An n-channel MOSFET has the same parameters as in Prob. 11.30. The gate terminal is connected to the drain terminal. Plot I D versus V DS for 0 < V DS < 5 V. Determine the range of V DS over which the transistor is biased in the nonsaturation regions. When the gate is connected to the drain, we have V GS = V DS , and the current is given by I D = WC ox μ e L V DS − V T − 1 2 V DS Λ Ν Μ Ξ Π Ο V DS = WC ox μ e L 1 2 V DS − V T Λ Ν Μ Ξ Π Ο V DS Because V GS...
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This note was uploaded on 10/28/2009 for the course EEE 352 taught by Professor Ferry during the Fall '08 term at ASU.
- Fall '08