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Lecture 24 - EEE 539Lecture 24 Non-Ideality in the MOSFET...

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EEE 539—Lecture 24 Non-Ideality in the MOSFET There are many ways in which the MOSFET behavior can differ from the ideal behavior we have described. In this lecture, we will examine a few of these.
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The variation of source drain current with voltage is more COMPLEX than expected But a region of SATURATED CURRENT is observed Sub-Threshold Current SOURCE-DRAIN VOLTAGE DRAIN CURRENT INCREASING POSITIVE GATE BIAS CHANNEL PINCH-OFF Current SATURATES when Zero current when This is an approximation!
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Before the channel is created, the structure is a pair of p-n junctions connected together in a manner such that one is always off. Nevertheless, this structure creates a n-p-n bipolar transistor. We haven’t studied it yet, but it can be an effective, high- current device. The sub-threshold current flows in this transistor, as shown in the first figure.
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Bipolar Transistors - + V BE - + V BC E c E F E v p- type n-type n-type Emitter Collector Base Two p-n junctions are brought into close proximity, with the common region being called the BASE . One region, in which the junction is commonly FORWARD BIASED is termed the EMITTER . The other region, in which the junction is commonly REVERSED BIASED is termed the COLLECTOR . Electrons are INJECTED from the emitter to the base under the forward bias, just as in a p-n junction. The BASE must be sufficiently THIN that these electrons can reach the COLLECTOR junction, where they are rapidly swept out (non-equilibrium).
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