Lecture 37

Infactthiscanoccuronlyduetovolume

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Unformatted text preview: nm.

If
we
do
not
use
a
full
 wrap‐around
gate,
then
the
situa?on
is
worse,
and
we
need
~
10
nm.
 Horizontal
wires
do
not
compete
 well
with
FinFETs!
 Just
as
importantly,
the
wrap‐around
gate
gives
beOer
control
of
leakage
 currents,
thus
reducing
significantly
the
device
OFF
currents.
 Turning
the
transistor
on
its
edge
 and
using
nanowires
can
certainly
 increase
the
packing
density,
 which
reduces
t...
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