Lecture 37

Gnanowires thicknessofmetalgatetg thicknessofoxidetox

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Unformatted text preview: create
more
device
 area
per
unit
area
of
Si,
we
need
to
have
 Fin
 h
 height
 Fin
 Si
substrate
 d
 width
 W
 pitch
 Novel
devices
can
only
 succeed
if
they
give
more
 ac?ve
area
per
unit
area
of
 Si.
 What
is
the
impact
of
this
on
e.g.
Nanowires?
 thickness
of
metal
gate
tG
 thickness
of
oxide
tox
 wire
 wire
 Si
substrate
 d
 width
 W
 pitch
 We
have
to
apply
the
 same
log...
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This note was uploaded on 10/28/2009 for the course EEE 352 taught by Professor Ferry during the Fall '08 term at ASU.

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