EECS 423 Lab Report 1

# EECS 423 Lab Report 1 - University of Michigan EECS 423 Lab...

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University of Michigan EECS 423 Lab Report 1 1

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Jordan Adams 10/7/2009 Honor Code: I have neither given nor received unauthorized aid on this laboratory report, nor have I concealed any violations of the Honor Code Jordan Adams .
Lab #1 Cleanroom Orientation and Label Si Wafers 1. Provide the sheet resistance measurements in a table. Calculate the resistivity in Ω-cm and doping concentration in cm -3 . Analyze the mean and the standard deviation resistivity measured. Determine the doping uniformity across your device wafer and among 4 different wafers. Compare the results to the manufacturer’s specifications Manufacturer’s Specifications: Thickness: 500 – 550 µm Front Surface: Polished Back Surface: Etched Grade: Prime Resistivity: 0.2 – 0.4 Ω-cm Diameter: 100 mm (4”) Type/Dopant: P/Boron Orientation: <100> Four Point Probe Measurements: All measurements in table are in units of Ω/sq Wafer # Top Center Bottom Left Right Average 2 6.25 6.30 6.44 6.48 6.18 6.33 3 6.49 6.29 6.42 6.36 6.48 6.41 1 4 6.25 6.14 6.27 6.27 6.31 6.25 5 6.46 6.40 6.45 6.34 6.45 6.42 Conversion to Resistivity: = * ( ) ρ ρsh TSi Ω∙cm where TSi is Si wafer Thicknesscmand ρsh is the Sheet Resistance *since thickness is giving in a range, will use the average of this range for this calculation. Exact thickness of each wafer was not measured or specified. Example: = * - * . ( .) ρ 525 μm 10 4cmμm 6 25 Ωsq = . ( ) ρ 0 33 Ω∙cm All measurements in table are in units of Ω-cm Wafer # Top Center Bottom Left Right Average Std Dev 2 0.33 0.33 0.34 0.34 0.32 0.33 0.007 3 0.34 0.33 0.34 0.33 0.34 0.34 0.005 1 Arrow indicates personal wafer. 3

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4 0.33 0.32 0.33 0.33 0.33 0.33 0.004 5 0.34 0.34 0.34 0.33 0.34 0.34 0.004 Since each wafer had about the same Average resistivity, we can expect that the doping across all wafers will be uniform. Since these wafers probably came from the same batch, this is to be expected. All wafer measured are within the manufacturer’s specifications. Also since there is a low Standard Deviation between the measurements on each wafer we can assume that the doping in each wafer its self is uniform as well. The resistivity across each wafer is uniform. Doping Concentration Conversions: - = pcm 3 1qμpρ ( / ) where q is electron chargeCand μp is hole mobility cm2 V∙s Hole mobility is dependent on the doping concentration. First using the resistivity calculated above, the doping concentration will be approximated from the resistivity vs. impurity concentration chart below. Estimate Doping Concentration: 4.5x10 16 (cm -3 ) to 6x10 16 (cm -3 ) Estimate hole mobility: 350(cm 2 /V-s) to 400(cm 2 /V-s) 4
concentration Concentration calculated with estimate hole mobility p(cm -3 ) μ (cm 2 /V-s) 4.5x10 15 420.3499834 4.6x10 15 411.2119403 4.7x10 15 402.4627501 4.8x10 15 394.0781094 4.9x10 15 386.035699 5.0x10 15 378.3149851 5.1x10 15 370.8970442 5.2x10 15 363.7644087 5.3x10 15 356.9009293 5.4x10

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## This note was uploaded on 10/29/2009 for the course EECS SOLID STAT taught by Professor Pang during the Fall '09 term at University of Michigan.

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EECS 423 Lab Report 1 - University of Michigan EECS 423 Lab...

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