EECS 423 Lab Report 2 - The University of Michigan EECS 423...

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The University of Michigan EECS 423 Lab Report 2
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Jordan Adams November 18 th 2009 Honor Code: I have neither given nor received unauthorized aid on this laboratory report, nor have I concealed any violations of the Honor Code Jordan Adams .
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Lab #5 Lithography to define Poly-Si Gates – First Alignment: 1. Summarize the Poly-Si sheet resistance, Gate Oxide Thickness, and step heights measured for Poly-Si Gate and Gate Oxide. Explain and compare to what the expectations are. Poly-Silicon Sheet Resistance: Top Center Right Bottom Left Average Error – 30 Error – 30 Error – 30 Error – 30 Error – 30 Error – 30 After reviewing the manual for the Four Point Probe machine, it was found that Error-30 occurs when the sheet resistance that is trying to be measured is higher than the limits of the machine. The Miller FPP5000 has limits of 0.001 m /sq to 450 k /sq(Miller). Since we are trying to measure the resistance of a very strong insulator, the sheet resistance is higher than the limit of 450 k /sp on the Four Point
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This note was uploaded on 10/29/2009 for the course EECS SOLID STAT taught by Professor Pang during the Fall '09 term at University of Michigan.

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EECS 423 Lab Report 2 - The University of Michigan EECS 423...

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