Lab1 - University of Michigan EECS 423 Lab Report 1 1...

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University of Michigan EECS 423 Lab Report 1 1
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Jordan Adams 10/7/2009
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Lab #1 Cleanroom Orientation and Label Si Wafers 1. Provide the sheet resistance measurements in a table. Calculate the resistivity in Ω-cm and doping concentration in cm -3 . Analyze the mean and the standard deviation of the doping concentration measured. Determine the doping uniformity across your device wafer and among 4 different wafers. Compare the results to the manufacturer’s specifications Manufacturer’s Specifications: Thickness: 500 – 550 µm Front Surface: Polished Back Surface: Etched Grade: Prime Resistivity: 0.2 – 0.4 Ω-cm Diameter: 100 mm (4”) Type/Dopant: P/Boron Orientation: <100> Four Point Probe Measurements: All measurements in table are in units of Ω/sq Wafer # Top Center Bottom Left Right Average 2 6.25 6.30 6.44 6.48 6.18 6.33 3 6.49 6.29 6.42 6.36 6.48 6.41 1 4 6.25 6.14 6.27 6.27 6.31 6.25 5 6.46 6.40 6.45 6.34 6.45 6.42 Conversion to Resistivity: = * ( ) ρ ρsh TSi Ω∙cm
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Lab1 - University of Michigan EECS 423 Lab Report 1 1...

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