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# EE 5602 HW1 CAD Verification - EE 5602 TransistorInductor...

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S_Param SP1 Step= Stop= Start= S-PARAMETERS TLIN TL1 F=1 GHz E=45 Z=50.0 Ohm Term Term2 Z=50 Ohm Num=2 Term Term1 Z=50 Ohm Num=1 freq 1.00 GHz S(1,1) 0.00 / 0.00 S(1,2) 1.00 / -45.00 S(2,1) 1.00 / -45.00 S(2,2) 0.00 / 0.00 Transistor data with S 12 =S 21 =0 Transistor data with S 12 =S 21 =0 Shunt Inductor Series Inductor EE 5602 HW1 CAD Verification John Rankin 9-21-2009 Problem 1: Single point simulation @ 1 GHZ Tabulated Simulation Results:

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Vi Vo S_Param SP1 Step= Stop= Start= S-PARAMETERS Term Term2 Z=50 Ohm Num=2 TLIN TL1 F=1 GHz E=45 Z=30.0 Ohm Term Term1 Z=50 Ohm Num=1 R R2 R=50 Ohm V_AC SRC1 Freq=freq Vac=polar(1,0) V AC AC1 Step= Stop= Start= AC TLIN TL2 F=1 GHz E=45 Z=30.0 Ohm R R1 R=50 Ohm freq 1.000 GHz S(1,1) 0.353 / -138.576 S(1,2) 0.936 / -48.576 S(2,1) 0.936 / -48.576 S(2,2) 0.353 / -138.576 freq 1.00 GHz Vi 0.39 / -17.61 Vo 0.47 / -48.58 Problem 1b: Single point simulation @ 1 GHZ Tabulated Simulation Results:
C C1 C=1.0 pF Term Term2 Z=50 Ohm Num=2 S_Param SP1 Step= Stop= Start= S-PARAMETERS Term Term1 Z=50 Ohm Num=1 freq 1.00 GHz S(1,1) 0.85 / -32.14 S(1,2) 0.53 / 57.86 S(2,1) 0.53 / 57.86 S(2,2) 0.85 / -32.14 Problem 1c: Single point simulation @ 1 GHZ Tabulated Simulation Results:

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L L1 R= L=10.0 nH Term Term2 Z=50 Ohm
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EE 5602 HW1 CAD Verification - EE 5602 TransistorInductor...

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