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Unformatted text preview: 1. Figure 1 shows the measured I D-V DS curves of a 5um/0.15um ( W/L ) NMOS transistor. Figure 1 a) The parameters can be estimated by choosing appropriate measured points on different curves. It is better to use the operation points where the simple Level 1 model is adequate. (for example don’t use V GS =1.5V curves where mobility degradation and velocity saturation effects are very visible.) V T0 : At V DS = 0.7V, V BS = 0 we measure I DS at two different V GS and take the ratio to eliminate other unknown parameters. mV V A A V V V V V V V V V V I V V V V V V I T T T BS DS GS DS BS DS GS DS 740 102 859 9 . 2 . 1 ) , 7 . , 9 . ( ) , 7 . , 2 . 1 ( 2 ≈ ⇒ = − − = = = = = = = µ µ γ : At V DS = 1.0V, V GS = 1.2 we measure I DS at two different V BS and take the ratio to eliminate other unknown parameters. A A V V V V V V V V V V I V V V V V V I T T BS DS GS DS BS DS GS DS µ µ 615 954 2 . 1 2 . 1 ) 2 . 1 , 1 , 2 . 1 ( ) , 1 , 2 . 1 ( 2 =...
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This note was uploaded on 11/08/2009 for the course ECE 304 taught by Professor Ma during the Spring '08 term at Arizona.
- Spring '08