ho18.l15_biasing_consid

ho18.l15_biasing_consid - Lecture 15 15 Voltage Biasing...

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1 Lecture 15 Lecture 15 Voltage Biasing Considerations R. Dutton, Boris Murmann R. Dutton, B. Murmann 1 EE114 (HO #18) Stanford University Recap: Process and Temperature Variations V B R I B V B = 2.5V V 1 394V v i V I R i “Transducer” V o I = 1.394V I B = 500 μ A W/L = 20 μ m/1 μ m R = 5k Ω R i = 50k Ω R. Dutton, B. Murmann 2 EE114 (HO #18) The next slide compares .op results using two sets of conditions – Nominal conditions – Fast parameters for NMOS, temperature = -20°C
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2 HSpice .op Output *** .op output (fast, -20degC) element 0:mn1 region Linear id 817.8268u *** .op output (nominal) element 0:mn1 region Saturati id 499.6020u vgs 1.3940 vds 910.8661m vth 402.0530m vod 991.9470m beta 1.6735m gm 1.5243m gds 210.6442u vgs 1.3940 vds 2.5020 vth 500.0000m vod 894.0000m beta 1.2502m gm 1.1177m gds 39.9618u R. Dutton, B. Murmann 3 ... EE114 (HO #18) ... The Problem with This Circuit Process and temperature variations cause large changes in V t and mobility ( μ) –B
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ho18.l15_biasing_consid - Lecture 15 15 Voltage Biasing...

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