# sol2 - ECE 440 HW2 Solutions Summer 2009 Thu 1 An InP...

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ECE 440 HW2 Solutions Summer 2009 Thu, June 25, 2009 1 1. An InP semiconductor crystal is doped with tin atoms. If the tin displaces indium atoms, does the crystal become an n-type or p-type material? Why? InP is a III – V compound semiconductor. Tin (Sn) is a column IV element. If Sn displaces the Indium (In) atoms, it will become a IV – V compound. Therefore, it would have one excess electron apart from the complete set of eight electrons. Hence, we have a n-type material. 2. Calculate and explicitly plot the Fermi function versus energy from E = E F – 0.20 eV to E = E F + 0.20 eV for T = 100 K, 300 K and 500 K. Make appropriate conclusions from your work. As the temperature increases, the chance of finding an electron with an energy above the Fermi level increases. Also, the chance of finding holes with energies below the Fermi level increases. 100K 300K 500K

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ECE 440 HW2 Solutions Summer 2009 Thu, June 25, 2009 2 3. The hole concentration in a silicon material is 6x10 5 /cm 3 at room temperature under equilibrium conditions. (a) What is the electron concentration? (b) Where is E
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