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# sol9 - ECE 440 HW9 Solutions Summer 2009 Wed 1 Redraw Fig...

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ECE 440 HW9 Solutions Summer 2009 Wed, Aug 05, 2009 1 1. Redraw Fig. 6-12 for the p-channel (n-type substrate) case. Also include schematic drawings showing the electric circuit and contact configurations.

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ECE 440 HW9 Solutions Summer 2009 Wed, Aug 05, 2009 2 2. An ideal MOS capacitor which is made on an n-type Si substrate with glyph1197 d = 6 x 10 15 /cm 3 case. The oxide thickness is 0.15 µm in the gate region. Find the maximum depletion width, W m , and the threshold voltage required for the onset of strong inversion, V T . For an ideal MOS, the equation to determine threshold voltage is equation (6-33). We need to calculate the three unknown quantities. Plugging back in to (1) we get (6). 3. (a) Find the threshold voltage for a Si n-channel MOS transistor with glyph1197 a = 10 17 /cm 3 , Φ ms = - 0.95 V, and an SiO 2 thickness d = 200 Å. Repeat for a p-channel device ( glyph1197 d = 10 17 /cm 3 ) with the same parameters (except for Φ ms , which can be calculated from the change in E F ). (b) Repeat part (a) to find only the threshold voltages for both n-channel and p-
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