sol9 - ECE 440 HW9 Solutions Summer 2009 Wed, Aug 05, 2009...

Info iconThis preview shows pages 1–3. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 440 HW9 Solutions Summer 2009 Wed, Aug 05, 2009 1 1. Redraw Fig. 6-12 for the p-channel (n-type substrate) case. Also include schematic drawings showing the electric circuit and contact configurations.
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE 440 HW9 Solutions Summer 2009 Wed, Aug 05, 2009 2 2. An ideal MOS capacitor which is made on an n-type Si substrate with # d = 6 x 10 15 /cm 3 case. The oxide thickness is 0.15 µm in the gate region. Find the maximum depletion width, W m , and the threshold voltage required for the onset of strong inversion, V T . For an ideal MOS, the equation to determine threshold voltage is equation (6-33). We need to calculate the three unknown quantities. Plugging back in to (1) we get (6). 3. (a) Find the threshold voltage for a Si n-channel MOS transistor with # a = 10 17 /cm 3 , Φ ms = - 0.95 V, and an SiO 2 thickness d = 200 Å. Repeat for a p-channel device ( # d = 10 17 /cm 3 ) with the same parameters (except for Φ ms , which can be calculated from the change in E F ). (b) Repeat part (a) to find only the threshold voltages for both n-channel and p-
Background image of page 2
Image of page 3
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 11/19/2009 for the course ECE 440 taught by Professor Lie during the Summer '09 term at University of Illinois at Urbana–Champaign.

Page1 / 6

sol9 - ECE 440 HW9 Solutions Summer 2009 Wed, Aug 05, 2009...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online