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ECE 2B Lab Report 3

# ECE 2B Lab Report 3 - Lab Experiment 3 Transistors at DC...

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Lab Experiment 3 Transistors at DC Joseph Marcus (8679987) Tuesday 5:00-7:50 P.M Joseph Marcus 07/14/2009 ECE 2B Lab #3 Tuesdays 5:00-7:50 Experiment Title : Transistors at DC Introduction and Objective : This lab will explore the basic properties of three types of transistors: JFETs, BJTs and MOSFETs. The goal is to learn to use these devices and their current-voltage characteristics and to learn how to

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configure proper circuit biasing conditions. In other words, the purpose of this lab is to teach how to bias transistors correctly. Experimental Procedure and Data : 3.1 Depletion-mode FETs (JFET) The JFET 2N5485 which is an n-channel depletion mode-device. This is used to construct a biasing circuit in the lab manual. Two power supplies are used so that the gate and drain voltages can be controlled. Since this is a JFET, the gate voltage is negative with respect to source and the drain source current is regulated using the DMM. V gs is set to 0V while V ds is slowly increased to 10V. After turning up the drain voltage to 10V, the gate voltage is decreased to -2.99V until the current was 0.01 mA. Several data points were collected and the I-V curves for I ds vs. V gs were collected with varying V ds values ranging from 0V to 15V. The curve looks like this: Vds= Vgs=0V Vgs=-0.5V Vgs=-1V Vgs=-1.5V Vgs=-2.82V 0V -0.08 mA -0.07 mA -0.05 mA -0.04 mA -0.03 mA 0.5V 2.80 mA
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ECE 2B Lab Report 3 - Lab Experiment 3 Transistors at DC...

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