10-dimitrijev-apl-3585-1994 - H igh quality ambient Y . T....

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High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient Z-Q. Yao, H. 8. Harrison, S. Dimitrijev, and D. Sweatman TFle School of Microclectrmic Engineering, Grifitit University, Nathan, @I> iiJII, Anstralin Y. T. Yeow Departmerct of Electrical and Computer Engitwerirzg, The University of Queensland, St. Lrrcia, QLLMO72, Austrabz (Received 10 January 1994; accepted for publication 25 April 1994) High quality ultrathin silicon oxynitride films (3.5 run) have been grown in a nitric oxide ambient using rapid thermal processin g. The physical and electrical properties of these films are compared with those formed in a nitrous oxide environment. X-ray photoelectron spectroscopy (XPS) results show that the nitric oxide !NOj grown films have a significantly different nitrogen distribution compared to the nitrious oxide (N20) grown films. The capacitance-voltage and current-voltage characteristics of the NO grown and NO-modified films are, in general, better than those of the same thickness grown in either N,O or 0,. Ultrathin gate dielectric films with excellent physical and electrical properties are needed for deep-submircometer applications in advanced integrated circuits such as scaled metal-oxide-semiconductor ticld-effect transistors IMOSFEZT). ’ To meet these requirements, oxynitride gate di- electrics have been investigated to replace conventional SiOa grown in oxygen. “-l3 NH,-nitrided oxides display improved properties compared to SiO2* due to nitrogen incorporated in the dielectric close to the Si-to-dielectric interface. How- ever, NH, nitridation incorporates hydrogen in the oxides which can reduce the reliability of the oxides. ’ Reoxidation of this film is required to reduce the hydrogen concentration.2 Recently, N20-grown and N20-modified ox- ides have been investigated, “-7* “-1 ” These oxides have dem- onstrated higher reliability and improved electrical character- istics. Yoon et al. argued that NaO-grown and N20-modified oxides do not hdve a sufficiently high nitrogen content to give optimal oxides. ” They further suggested NH,-nitridation of NaO-grown oxides to increase the nitro- gen content. Again the hydrogen from NHa will lead to deg- radation of the electrical properties of the oxide. ’ To avoid the disadvantages of NaO and NH,: we suggest, for the first time, the use of nitric oxide in rapid thermal processing (RTP) oxidation which we believe will lead to a higher ni- trogen content without the deleterious effect of hydrogen in- corporation. The layers showed excellent physical and elec- trical properties comparable to those grown in an NZO ambient.
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This note was uploaded on 12/10/2009 for the course IF PFIS1200 taught by Professor Antonio during the Spring '09 term at Universidade Federal do Rio de Janeiro.

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10-dimitrijev-apl-3585-1994 - H igh quality ambient Y . T....

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