423-morkoç-jap-1994-1363 - L...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
Large-band-gap SIC, Ill-V nitride, and II-VI ZnSe-based semiconductor device technologies H. MorkoG, S. Strite,a) G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns University of Illinois, Materials Research Laboratory and Coodinated Science Laboratory 104 South Goodwin Avenue, Urbana, Illinois 61801 (Received 13 January 1993; accepted for publication 17 March 1994) - In the past several years, research in each of the wide-band-gap semiconductors, Sic,. GaN, and a ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high-temperature electronics and short-wavelength optical applications are compared. The outstanding thermal and chemical stability of Sic and GaNshould enable them to operate ai high temperatures and in hostile environments, and ‘also make them attractive for high-power operation. The present advanced stage of development of Sic substrates and metal-oxide-semiconductor technology makes Sic the leading contender for high-temperature and high-power applications if ohmic contacts and interface-state densities can be further improved. GaN, despite fundamentally ,-superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced Sic infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both and GaN, and the microwave characteristics and high-temperature performance of Sic transistors. have been studied. For optical emitters and detectors, ZnSe, Sic, and GaN all have c. demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue Sic light-emitting ” ~~ diodes (LEDs) have been on the market fo;-several years, joined recently by UV and blue GaN-based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both Sic and GaN. In laser development, ZnSe leads the way with more sophisticated designs -having further improved performance being rapidly demonstrated. If the low damage threshold of Z&e continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short-wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping ’densities (especially p type) and-ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger Sic substrates. Improved substrate materials, ideally GaN itself, need tb be aggressively pursued to furthe; develop the GaN-based material system-and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe-based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide-band-gap semiconductor systems have
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 12/10/2009 for the course IF PFIS1200 taught by Professor Antonio during the Spring '09 term at Universidade Federal do Rio de Janeiro.

Page1 / 36

423-morkoç-jap-1994-1363 - L...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online