586-vathulya-apl-1998-2161 - APPLIED PHYSICS LETTERS VOLUME...

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On the correlation between the carbon content and the electrical quality of thermally grown oxides on p -type 6H–Silicon carbide Vickram R. Vathulya, a) Dong Ning Wang, and Marvin H. White Lehigh University, Sherman Fairchild Center, Bethlehem, Pennsylvania 18015 ~ Received 27 March 1998; accepted for publication 7 August 1998 ! Thermal oxides on p -type silicon carbide exhibit high densities of interface states and fixed charge. Understanding the effect of the oxide composition on the electrical properties is imperative to improve the quality of oxides on p -type silicon carbide. In this work, we use angle resolved x-ray photoelectron spectroscopy to profile the oxide composition. The result is a direct correlation between the carbon content in the oxide and the density of interface states and fixed charge as determined by electrical capacitance–voltage measurements. © 1998 American Institute of Physics. @ S0003-6951 ~ 98 ! 01641-6 # Silicon carbide ~ SiC ! over the last decade has become a material of intense focus by researchers due to its potential capability of providing high power and high frequency de- vices operating at elevated temperatures. SiC offers an in- crease in breakdown field strength, saturated electron veloc- ity, and thermal conductivity over silicon which is expected to provide an order of magnitude improvement in power den- sity while being able to dissipate heat more effectively than silicon. SiC is the only compound semiconductor that can be oxidized to form silicon dioxide (SiO 2 ) which is a distinct advantage when compared to other semiconductors like gal- lium arsenide and indium phosphide where passivation is a major concern in device fabrication. 1 Recent studies on oxides grown on n - and p -type silicon carbide 2–5 indicate that oxides on p -type SiC show signifi- cantly higher effective fixed charge and interface state den- sities than the n -type samples although it is not clear if this observation arises from p -type dopants diffusing into the ox- ide or the nature of the interface state charge. There has been a lot of work in this area to improve the quality of oxides grown on p -type SiC and currently oxides with interface den- sities and fixed oxide charge in the low 10 11 range are achievable. 4,6 The characterization of oxides on SiC has been based mainly upon the electrical qualities of the metal-oxide- semiconductor ~ MOS ! capacitors fabricated on the oxidized samples. Relatively fewer studies have been based on exam- ining the material composition of the oxide itself. A firmer grasp of the oxidation mechanism in SiC by combining the
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This note was uploaded on 12/10/2009 for the course IF PFIS1200 taught by Professor Antonio during the Spring '09 term at Universidade Federal do Rio de Janeiro.

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586-vathulya-apl-1998-2161 - APPLIED PHYSICS LETTERS VOLUME...

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