49598

49598 - EE 541 Class Lecture Weeks 11-12 Transmission Lines...

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EE 541 Class Lecture Weeks 11-12 Prof. John Choma, Professor Department of Electrical Engineering- Electrophysics University of Southern California University Park; MC: 0271; PHE #604 Los Angeles, California 90089-0271 213-740-4692 [USC Office] 213-740-7581 [USC Fax] [email protected] Transmission Lines and IC Interconnect Parasitics Fall 2006 Semester
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University of Southern California Choma: EE 541 230 Overview Of Lecture Overview Of Lecture z Integrated Circuit Capacitors ± Single Conductor Over Ground Plane ± Capacitor Sandwiches ± Capacitor Metrics And Models z Integrated Circuit Inductances ± Bond Wire ± Spirals ± Inductor Metrics And Models z Distributed Phenomena ± Transmission Line Models For Interconnects ± Distributed Model ± Response Characteristics And Performance Metrics
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University of Southern California Choma: EE 541 231 Monolithic Capacitances Monolithic Capacitances z Chip Capacitance ± Indigenous To All Chip Interconnect Metalization ± Parasitic Capacitance Of Metalization Critical In RF Circuits ± Capacitance Equations ² Pertinent To Metalization Parasitics ² Pertinent To Actual Capacitor Realizations ² Mathematical Relationships ¾ Semi-Empirical ¾ Accounts For Fringing And Other Parasitic Phenomena z Capacitance Types ± Single Conductor Over Ground Plane ± Conductor Sandwiched Between Two Ground Planes ± Conductor Sandwiched Between Two Conductors Lying Over Ground Plane
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University of Southern California Choma: EE 541 232 L W Metal Conductor Top View W T Metal H Cross Section Ground Plane z Diagram z Total Capacitance To Ground ± C T = C + C p = C(1 + η p ) ± C Is Natural “Parallel Plate” Capacitance ² ε Is Dielectric Constant Of Medium Having Thickness H ² If Medium Is Silicon, ε = 1.05 pF/cm ± C p Is Parasitic “Fringing” Capacitance ± Normalized Parasitic Capacitance Is η p ± The Larger W Is In Comparison With H And The Geometric Mean Of T And H , The Smaller Is The Parasitic Capacitive Component ε WL C H = pp C η C = 0.75 p p C H HT H η 0.77 1.06 CW WW  =≈ + +   Single Conductor Over Ground Single Conductor Over Ground
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University of Southern California Choma: EE 541 233 Single Conductor Parasitic C Single Conductor Parasitic C 1 1/6 2 2/6 3 3/6 45 67 8 9 : Metal Width -To- Ground Height, W/H Pa ra si ti c C apac it anc e Fa ct or , C p /C T/H = 0.1 T/H = 0.001
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University of Southern California Choma: EE 541 234 Capacitor Sandwich Capacitor Sandwich L W Metal Conductor Top View W T Metal H 1 Conductive Plane H 2 Conductive Plane z Diagram z Total Capacitance To Ground ± C T = C + C p = C(1 + η p ) ± C Is Natural “Parallel Plate” Capacitance ± C p Is Parasitic “Fringing” Capacitance ± Normalized Parasitic Capacitance Is η p ± The Larger W Is In Comparison With H And The Geometric Mean Of T And H , The Smaller Is The Parasitic Capacitive Component ε WL C H = pp C η C = 0.25 2 0.75 p 21 p 2 12 2 C HH HHT H η 0.77 0.89 1 CW WW H H H   =≈ + + + +  H H H + ±
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University of Southern California Choma: EE 541 235 Capacitance Of
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This note was uploaded on 12/12/2009 for the course EE 541 at USC.

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49598 - EE 541 Class Lecture Weeks 11-12 Transmission Lines...

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