EE_331F_2009_-_HW1S

# EE_331F_2009_HW1S - EE 331 Devices and Circuits I Problem#1 Solution Fall 2009 2.2 Based upon Table 2.1 a resistivity of 1015-cm > 105-cm and

This preview shows pages 1–2. Sign up to view the full content.

EE 331 Devices and Circuits I Fall 2009 Problem #1 Solution 2.2 Based upon Table 2.1, a resistivity of 10 15 -cm > 10 5 -cm, and silicon dioxide is an insulator. 2.5 Define an M-File: function f=temp(T) ni=1E14; f=ni^2-1.08e31*T^3*exp(-1.12/(8.62e-5*T)); n i = 10 14 /cm 3 for T = 506 K n i = 10 16 /cm 3 for T = 739 K 2.11 v n   n E   1000 cm 2 V s   2000 V cm   2.00 x 10 6 cm s v p   p E   400 cm 2 V s 2000 V cm   8.00 x 10 5 cm s j n   qnv n   1.60 x 10 19 C 10 3 1 cm 3 2.00 x 10 6 cm s   3.20 x 10 10 A cm 2 j p qnv p 1.60 x 10 19 C 10 17 1 cm 3 8.00 x 10 5 cm s   1.28 x 10 4 A cm 2 2.14

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
For intrinsic silicon, q n n i p n i qn i n
This is the end of the preview. Sign up to access the rest of the document.

## This note was uploaded on 12/13/2009 for the course EE 331 taught by Professor Donthavemyschool during the Spring '09 term at Vermont Tech.

### Page1 / 2

EE_331F_2009_HW1S - EE 331 Devices and Circuits I Problem#1 Solution Fall 2009 2.2 Based upon Table 2.1 a resistivity of 1015-cm > 105-cm and

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online