EE_331F_2009_-_HW3S

# EE_331F_2009_-_HW3S - EE 331 Devices and Circuits I Problem...

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Autumn 2009 Problem #3 Solution 3.2 p po N A 10 18 cm 3 | n po n i 2 p po 10 20 10 18 10 2 cm 3 n no N D 10 15 cm 3 | p no n i 2 n no 10 20 10 15 10 5 cm 3 j V T ln N A N D n i 2 0.025 V ln 10 18 cm 3 10 15 cm 3 10 20 cm 6 0.748 V w do 2 s q 1 N A 1 N D j 2 11.7 8.854 x 10 14 F cm 1 1.602 x 10 19 C 1 10 18 cm 3 1 10 15 cm 3 0.748V w do 98.4 x 10 6 cm 0.984 m 3.8 j n E , = 1 1 0.5  cm 2  cm | E j n 1000 A cm 2 2  cm 1 500 V cm 3.12 j p q p pE qD p dp dx 0 E   D p p 1 p dp dx   kT q 1 p dp dx p ( x ) N o exp x L | 1 p dp dx 1 L | E = V T L   0.025 V 10 4 cm   250 V cm The exponential doping results in a constant electric field. 3.22

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## This note was uploaded on 12/13/2009 for the course EE 331 taught by Professor Donthavemyschool during the Spring '09 term at Vermont Tech.

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EE_331F_2009_-_HW3S - EE 331 Devices and Circuits I Problem...

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