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EE_331F_2009_-_HW5S

# EE_331F_2009_-_HW5S - EE 331 Devices and Circuits I...

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1 EE 331 Devices and Circuits I Autumn 2009 Problem #5 Solution 4.4 (a) K n ' n C ox " n ox T ox n 3.9 o T ox 500 cm 2 V sec 3.9 8.854 x 10 14 F / cm 50 x 10 9 m 100 cm / m K n ' 34.5 x 10 6 F V sec 34.5 x 10 6 A V 2 34.5 A V 2 (b) & (c) Scaling the result from part (a) yields K n ' 34.5 A V 2 50 nm 20 nm 86.3 A V 2 | K n ' 34.5 A V 2 50 nm 10 nm 173 A V 2 | K n ' 34.5 A V 2 50 nm 5 nm 345 A V 2 4.8 a   0 0.8 V I D = 0 ( b ) V GS - V TN = 0.2 V , V DS = 0.25 V Saturation region I D K n ' 2 W L V GS V TN V DS 2 V DS 200 2 A V 2 5 m 0.5 m 1 0.8 2 40.0 A ( c ) V GS - V TN = 1.2 V , V DS = 0.25 V triode region I D K n ' W L V GS V TN V DS 2 V DS 200 A V 2 5 m 0.5 m 2 0.8 0.25 2 0.25 538 A ( d ) V GS - V TN = 2.2 V , V DS = 0.25 V triode region I D K n ' W L V GS V TN V DS 2 V DS 200 A V 2 5 m 0.5 m 3 0.8 0.25 2 0.25 1.04 mA e   K n K n ' W L 200 A V 2 5 m 0.5

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EE_331F_2009_-_HW5S - EE 331 Devices and Circuits I...

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