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EE_331F_2009_-_HW6S

# EE_331F_2009_-_HW6S - EE 331 Devices and Circuits I...

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1 EE 331 Devices and Circuits I Fall 2009 Problem #6 Solution 4.85 a   V GG 100 k 100 k  220 k 12 V 3.75 V | Assume saturation 3.75 V GS 24 x 10 3 I D V GS 24 x 10 3 100 x 10 6 2 5 1 V GS 1 2 6 V GS 2 11 V GS 2.25 0 V GS 1.599 V and I D 89.7 A V DS 12 36 x 10 3 I D 8.77 V | V DS V GS V TN Saturation is correct. Checking : V GG 24 x 10 3 I D V GS 3.75 V which is correct. Q po int : 89.7 A , 8.77 V b   Assume saturation 3.75 V GS 24 x 10 3 I D V GS 24 x 10 3 100 x 10 6 2 10 1 V GS 1 2 12 V GS 2 23 V GS 8.25 0 V GS 1.439 V and I D 96.4 A V DS 12 36 x 10 3 I D 8.53 V | V DS V GS V TN Saturation is correct. Checking : V GG 24 x 10 3 I D V GS 3.75 V which is correct. Q po int : 96.4 A , 8.53 V 4.90 (a) Setting KP = 500U, VTO = 1, and GAMMA = 0 yields I D = 89.6 A, V GS = 1.60 V and V DS = 8.77 V

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EE_331F_2009_-_HW6S - EE 331 Devices and Circuits I...

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