chap4 3115

chap4 3115 - • NMOS operates faster and at lower power...

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Chapter 4 MOSFETs
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4-1. Device Structure . Fig. 4-1 . Physical structure of the enhancement- type NMOS transistor
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Fig. 4-2 . The enhancement-type NMOS transistor with applied voltage
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Applying a small v DS . Fig. 4-3 An NMOS transistor with v GS > v t and s small v DS
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Fig. 4-4 . The i D –v DS characteristics of the MOSFET
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With increasing v DS . Fig. 4-5 The enhancement NMOS transistor as v DS is increased
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Fig. 4-6 The drain current i D vs v DS
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Fig. 4-11 The i D – v DS characteristics of an n- channel enhancement type MOSFET
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Fig. 4-12 The i D -v DS characteristic for an enhancement –type NMOS transistor in saturation
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Fig. 4-7 A tapered shape caused by increasing v DS
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The p-Channel MOSFET • v GS , v DS and v t are negative • i D enters from the source terminal and leaves through the drain terminal .
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Unformatted text preview: • NMOS operates faster and at lower power than PMOS . Fig. 4-9 Cross section of a CMOS circuit Fig. 4-10 Circuit symbol for the n-channel enhancement –type MOSFET The n- channel depletion –type MOSFET The I-V characteristic of MOSFET The depletion type n-channel MOSFET Fig. 4-13 Large signal equivalent circuit of an n-channel MOSFET Fig. 4-17 Large signal equivalent circuit of the n-channel MOSFET in saturation with r 0 Fig. 4-37 Small signal models for the MOSFET Fig. 4-37 (b) with the channel length modulation Fig. 4-40 T model of the MOSFET with r 0 Fig. 4-18 Circuit symbol for the p-channel enhancement type MOSFET The common –source amplifier with a source resistance The common – source amplifier...
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This note was uploaded on 12/20/2009 for the course EE 3112 taught by Professor Nangtran during the Summer '09 term at Minnesota.

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chap4 3115 - • NMOS operates faster and at lower power...

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