3.98 - 3.98 A thin layer of aluminum nitrides is sometimes...

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3.98 A thin layer of aluminum nitrides is sometimes deposited on Silicon wafers at high temperatures (1000C). The coefficient of thermal expansion and the lattice constant of the silicon crystal is different than that of aluminum nitride. Will this cause a problem? Explain. Aluminum nitrides have many properties that give it its usefulness. They have high hardness, high thermal conductivity, and resistance to high temperature and caustic chemicals (Buschow). When the aluminum nitride is deposited on silicon wafers, it is combined in a noncrystalline or amporphous form allowing the industry to use this new composition in electronic packaging applications (Buschow). Although the coefficient of thermal expansion of aluminum nitride is different from that of silicon, it is still closer than other materials that can replace aluminum nitride (Licari & Enlow). In addition aluminum nitride also has some economic benefits such as a distinct lower cost and no limitations or toxicity controls on processing (Licari & Enlow). Although the coefficient of thermal expansion and the lattice constant are different, there will be no
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This note was uploaded on 01/08/2010 for the course ECH 4824 taught by Professor Zieglar during the Fall '09 term at University of Florida.

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