10 - 3 Calculate(a the electron and hole concentrations after doping and(b the resultant electrical resistivity at 300 K[Assume ni = 1.5 x 10 16/m

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
HW10 Due November 11 th 14.8 A wire 0.40 cm in diameter must carry a 25 A current.(a) If the maximum power dissipation along the wire is 0.025 W/cm, what is the minimum allowable electrical conductivity of the wire (give answer in SI units)? ( b ) What is the current density in the wire? 14.15 At what temperature will an iron wire have the same electrical resistivity as an aluminum one has at 35°C? 14.29 Calculate the electrical resistivity of germanium at 300 K. 14.35 Draw energy-band diagrams showing donor or acceptor levels for the following: (a) n-type silicon with phosphorus impurity atoms (b) p-type silicon with boron impurity atoms 14.39 A silicon wafer is doped with 7.0 x10 21 phosphorus atoms/m
Background image of page 1
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: 3 . Calculate (a) the electron and hole concentrations after doping and (b) the resultant electrical resistivity at 300 K. [Assume ni = 1.5 x 10 16 /m 3 and μn = 0.1350 m 2 /(V ·s).] 14.42 A silicon wafer is doped with 2.50 × 10 16 boron atoms/cm3 plus 1.60 × 10 16 phosphorus atoms/cm 3 at 27°C.Calculate (a) the electron and hole concentrations (carriers per cubic centimeter), (b) the electron and hole mobilities (use Fig. 14.26), and (c) the electrical resistivity of the material. 14.68 Calculate the intrinsic electrical conductivity of InSb at 60 and at 70°C. [Eg = 0.17 eV; μn = 8.00 m 2 /(V · s); μp = 0.045 m 2 /(V · s); ni = 1.35 × 10 22 m-3 .]...
View Full Document

This note was uploaded on 01/08/2010 for the course ECH 3264 taught by Professor Asthagiri during the Spring '09 term at University of Florida.

Ask a homework question - tutors are online