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ChE 150B
Problem Set 4
Due September 23, 2009
Problem 1.
(20 points) Trichlorethane, Cl
3
CCH
3
(TCA), is used to chlorinate films of SiO
2
grown by thermal oxidation.
A semiconductor fabrication process has been proposed involving
the evaporation of the TCA into a flowing inert gas stream.
A pan will contain the liquid TCA at
a uniform depth of 0.1 m and a length of 4 m in the direction the 6 m/s insert gas will flow.
The
pan is quite wide.
The liquid TCA will be maintained at a temperature of 293 K and the
system’s pressure will be 1.013x10
5
Pa.
Under these conditions, the vapor pressure of TCA is
1.33x10
4
Pa, the kinematic viscosity of the inert gas is 1.5x10
5
m
2
/s, and the diffusivity of TCA
may be assumed to be 1.0x10
5
m
2
/s.
If the density of the liquid TCA is assumed to be 1 g/cm
3
and the transition from laminar to turbulent flow occurs at Re
x
= 2x10
5
, determine the time that
will be required to evaporate the TCA.
Problem 2. (15 points) A 1m square, thin plate of naphthalene is oriented parallel to an air
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This note was uploaded on 01/13/2010 for the course CHEM 1 taught by Professor Pines during the Winter '08 term at University of California, Berkeley.
 Winter '08
 Pines

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