3-Handouts_Handout_2c - ± Reverse-Bias Region (-V zk...

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Diode Terminal Characteristics ± Forward-Bias Region (v > 0) ± ± I s Saturation (Scaling) current doubles for each 5 ° C rise in Temperature ± V T = kT/q 25 mV at room temperature (20 ° C) ± n is a constant between 1 and 2 depends on the material and the structure ± ± ± v changes by 2.3nV T (60 mV for n=1) for 1 decade current change ± For constant current v decrease by 2mV for every 1 ° C increase in temp. ) 1 ( = T nV v s e I i s nV v s I i e I i T >> ) log( 3 . 2 ) ln( s T s T I i nV I i nV v = = The i-v characteristic of a silicon junction diode. The temperature dependence of the diode forward characteristic
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Diode Terminal Characteristics (cont.)
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Unformatted text preview: ± Reverse-Bias Region (-V zk <v<0 ) ± i ≈-I s ± Practically we have leakage component current which makes “ i” to be voltage dependant and doubles for each 10 ° C rise in Temperature ± Breakdown Region (-V zk >v ) ± V ≈-V zk ± The diode acts like an ideal battery ± Current is determined by external circuit components ± Maximum power dissipation determine the maximum current of operation The diode i-v relationship with some scales expanded and others compressed in order to reveal details....
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This note was uploaded on 01/16/2010 for the course EE ee203 taught by Professor Electronics1 during the Spring '09 term at King Fahd University of Petroleum & Minerals.

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3-Handouts_Handout_2c - ± Reverse-Bias Region (-V zk...

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