3-Handouts_Handout_4b - Enhancement NMOS Structure...

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Unformatted text preview: Enhancement NMOS Structure Qualitative I/V C/Cs I/V C/Cs Depletion NMOS Transistor Enhancement PMOS Transistor CMOS MOSFET Transistor Structure and I/V Characteristics Dr. Alaa El-Din Hussein March 21, 2008 Dr. Alaa El-Din Hussein — MOSFET Transistor 1/29 Enhancement NMOS Structure Qualitative I/V C/Cs I/V C/Cs Depletion NMOS Transistor Enhancement PMOS Transistor CMOS Outline 1 Enhancement NMOS Structure 2 Qualitative I/V C/Cs 3 I/V C/Cs 4 Depletion NMOS Transistor 5 Enhancement PMOS Transistor 6 CMOS Dr. Alaa El-Din Hussein — MOSFET Transistor 2/29 Enhancement NMOS Structure Qualitative I/V C/Cs I/V C/Cs Depletion NMOS Transistor Enhancement PMOS Transistor CMOS Outline 1 Enhancement NMOS Structure 2 Qualitative I/V C/Cs 3 I/V C/Cs 4 Depletion NMOS Transistor 5 Enhancement PMOS Transistor 6 CMOS Dr. Alaa El-Din Hussein — MOSFET Transistor 3/29 Enhancement NMOS Structure Qualitative I/V C/Cs I/V C/Cs Depletion NMOS Transistor Enhancement PMOS Transistor CMOS Enhancement NMOS Structure Notes 4 device terminals: Gate(G), Drain(D), Source(S) and Body(B). Source and drain regions form PN junctions with substrate. V SB , V DS , and V GS always positive during normal operation. V SB always < V DS and V GS to reverse bias PN junctions Dr. Alaa El-Din Hussein — MOSFET Transistor 4/29 Enhancement NMOS Structure Qualitative I/V C/Cs I/V C/Cs Depletion NMOS Transistor Enhancement PMOS Transistor CMOS Enhancement NMOS Structure Notes 4 device terminals: Gate(G), Drain(D), Source(S) and Body(B). Source and drain regions form PN junctions with substrate. V SB , V DS , and V GS always positive during normal operation. V SB always < V DS and V GS to reverse bias PN junctions Dr. Alaa El-Din Hussein — MOSFET Transistor 4/29 Enhancement NMOS Structure Qualitative I/V C/Cs I/V C/Cs Depletion NMOS Transistor Enhancement PMOS Transistor CMOS Enhancement NMOS Structure Notes 4 device terminals: Gate(G), Drain(D), Source(S) and Body(B). Source and drain regions form PN junctions with substrate. V SB , V DS , and V GS always positive during normal operation. V SB always < V DS and V GS to reverse bias PN junctions Dr. Alaa El-Din Hussein — MOSFET Transistor 4/29 Enhancement NMOS Structure Qualitative I/V C/Cs I/V C/Cs Depletion NMOS Transistor Enhancement PMOS Transistor CMOS Enhancement NMOS Structure Notes 4 device terminals: Gate(G), Drain(D), Source(S) and Body(B). Source and drain regions form PN junctions with substrate. V SB , V DS , and V GS always positive during normal operation. V SB always < V DS and V GS to reverse bias PN junctions Dr. Alaa El-Din Hussein — MOSFET Transistor 4/29 Enhancement NMOS Structure Qualitative I/V C/Cs I/V C/Cs Depletion NMOS Transistor Enhancement PMOS Transistor CMOS Enhancement NMOS Structure Notes 4 device terminals: Gate(G), Drain(D), Source(S) and Body(B)....
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3-Handouts_Handout_4b - Enhancement NMOS Structure...

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