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3-Handouts_Handout_4a

# 3-Handouts_Handout_4a - MOSFET DC Analysis Procedure...

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MOSFET DC Analysis Procedure Examples MOSFET As A Current Source MOSFET Transistor DC Analysis Dr. Alaa El-Din Hussein March 18, 2008 Dr. Alaa El-Din Hussein — MOSFET Transistor 1/24

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MOSFET DC Analysis Procedure Examples MOSFET As A Current Source Outline 1 MOSFET DC Analysis Procedure 2 Examples 3 MOSFET As A Current Source Dr. Alaa El-Din Hussein — MOSFET Transistor 2/24
MOSFET DC Analysis Procedure Examples MOSFET As A Current Source Outline 1 MOSFET DC Analysis Procedure 2 Examples 3 MOSFET As A Current Source Dr. Alaa El-Din Hussein — MOSFET Transistor 3/24

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MOSFET DC Analysis Procedure Examples MOSFET As A Current Source MOSFET DC Analysis Procedure Procedure 1 Apply KVL at the gate source loop to ﬁnd V GS 2 If V GS < V TN , the transistor is oﬀ. Otherwise, assume an operating region (usually saturation) 3 Use V GS from step 1 to calculate I D using the transistor current equation 4 Apply KVL at the drain source loop and use I D from step 3 to ﬁnd V DS 5 Check the validity of assumed region by comparing V DS to V DSAT 6 Change assumptions and analyze again if required. An enhancement-mode device with V DS = V GS is always in saturation If we have a source resistance, we need to solve the equations in steps 1 and 3 together to ﬁnd I D and V GS . If we include channel length modulation or we are in the triode region, we will solve the equations in steps 3 and 4 together If we include channel length modulation or we are in the triode region and we have a source resistance, we will solve the equations in steps 1, 3, and 4 together Dr. Alaa El-Din Hussein — MOSFET Transistor 4/24
MOSFET DC Analysis Procedure Examples MOSFET As A Current Source MOSFET DC Analysis Procedure Procedure 1 Apply KVL at the gate source loop to ﬁnd V GS 2 If V GS < V TN , the transistor is oﬀ. Otherwise, assume an operating region (usually saturation) 3 Use V GS from step 1 to calculate I D using the transistor current equation 4 Apply KVL at the drain source loop and use I D from step 3 to ﬁnd V DS 5 Check the validity of assumed region by comparing V DS to V DSAT 6 Change assumptions and analyze again if required. An enhancement-mode device with V DS = V GS is always in saturation If we have a source resistance, we need to solve the equations in steps 1 and 3 together to ﬁnd I D and V GS . If we include channel length modulation or we are in the triode region, we will solve the equations in steps 3 and 4 together If we include channel length modulation or we are in the triode region and we have a source resistance, we will solve the equations in steps 1, 3, and 4 together Dr. Alaa El-Din Hussein — MOSFET Transistor 4/24

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MOSFET DC Analysis Procedure Examples MOSFET As A Current Source MOSFET DC Analysis Procedure Procedure 1 Apply KVL at the gate source loop to ﬁnd V GS 2 If V GS < V TN , the transistor is oﬀ. Otherwise, assume an operating region (usually saturation) 3 Use V GS from step 1 to calculate I D using the transistor current equation 4 Apply KVL at the drain source loop and use I D
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3-Handouts_Handout_4a - MOSFET DC Analysis Procedure...

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