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Practice4

# Practice4 - ME 083 Spring 2002 Structure and Properties of...

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ME 083 Spring 2002 Structure and Properties of Solids Practice Exam #4 April 24, 2002 Problem 1: Semiconductors (a) Sketched below is a p-n junction diode in two different circuits: p n - + (a) p n + - (b) Figure 1: p-n junction diaode. Which of these two circuits will conduct electricity? Why? Of what engineering use is such a diode? 1

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(b) An intrinsic semiconductor has a conductivity of 111 (Ω - m ) - 1 at 10 o C and 172 (Ω - m ) - 1 at 17 o C . What is the band gap of this semiconductor? (c) Suppose a piece of silicon is doped with phosphorous in a concentration of 10 26 m - 3 . The intrinsic carrier concentration of silicon at room temperature is 2 × 10 16 m - 3 . Calculate the resulting hole concentration at room temperature. (c) GaAs (gallium arsenide) is a semiconducting material which can be made to convert elec- tricity to light with a very high efficiency. Actually, it is a semiconducting laser. Sketch the band structure you would expect for GaAs assuming it is an intrinsic semiconductor.
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• Spring '04
• Zauscher
• room temperature, intrinsic carrier concentration, p-n junction diode, intrinsic semiconductor, room temperature conductivity

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Practice4 - ME 083 Spring 2002 Structure and Properties of...

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