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# Sol6 - ECE 255 ELECTRONIC ANALYSIS AND DESIGN Homework 6...

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T1 2 kohm Vdd = -16 V 100 kohm Vdd = -16 V 500 kohm 2 kohm Vdd = 20V 500 ohms T1 1 Mohm 4 Mohm Vdd = 20V 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Drain Current (mA) Gate-to-Source Voltage (V) ECE 255 ELECTRONIC ANALYSIS AND DESIGN Fall 2009 Homework 6 Solutions Problem 1 Let V DD = -16 V and R 1 = 500 k in the bias circuit shown below. The MOSFET is described by the nonlinear relationship 2 GS D V I 30 1 m A 3 = - + . Find I D and V DS . ( 29 GS G 100 V V 16 V 2.667V 100 500 = = - = - + But V T = -3 V; consequently, the MOSFET is cut-off. Therefore, the operating point is I D = 0 and V DS = -16 V. Problem 2 The FET shown in the figure below happens to be modeled more closely by the nonlinear trigonometric relationship D GS I 9 9cos V m A 3 3 π π = - - , than by a parabola when operating in the Beyond- Pinch-Off region. Find the operating point. ( 29 G 1 V 20 V 4V 1 4 = = + GS G D SS D V V I R 4 .5I = - × = - (where I D is in mA) or ( 29 GS D GS 4 V I 8 2V m A .5 - = = - also D GS I 9 9cos V m A 3 3 π π = - - You have two equations in two unknowns (I D and V GS ) – solve – either by trial-and-error or graphically (as shown below). V GS = 1.9502 V and I D = 4.10 mA ( D GS I 8 2V m A = - D GS I 9 9cos V mA 3 3 π π = - -

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R 2 Vs Problem 3 Any linear 2-port circuit can be char by the following pair of equations: V 1 = h 11 I 1 + h 12 V 2 I
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Sol6 - ECE 255 ELECTRONIC ANALYSIS AND DESIGN Homework 6...

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