ee100Fa08-Lab2-MultiSim-report

ee100Fa08-Lab2-MultiSim-report - EECS 100 MultiSim...

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Unformatted text preview: EECS 100 MultiSim Laboratory L. Chua Page 1 LAB REPORT V2 Lab Session: Name 1: SID: Name 2: SID: 1. Tutorial Download the MultiSim tutorial from the EE100 website and follow it through Section 6. Studying the additional material is optional. You may complete this tutorial at home (follow the directions online) or in lab. 2. Component characteristics. Use MultiSim to produce a plot of the I/V characteristics of a diode (symbol ) for V = 0 … 1V. Use logarithmic spacing for the current (right click the axis in the MultiSim plot window to set logarithmic spacing). Suggestion: use a voltage source in series with the diode as an “ampere meter” and plot its branch current. Use your plot to determine by what amount the voltage across the diode must be increased to increase the current from 10 μ A to 100 μ A? Simulated Value: _____ mV ___ of 10 M It turns out that this value (usually referred to by the term “subthreshold slope”) has great importance for the power dissipation of electronic circuits: it tells how well circuits can be turned off to conserve power. the power dissipation of electronic circuits: it tells how well circuits can be turned off to conserve power....
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This note was uploaded on 01/25/2010 for the course ME 25326 taught by Professor Poolla during the Spring '10 term at Berkeley.

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ee100Fa08-Lab2-MultiSim-report - EECS 100 MultiSim...

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