Unformatted text preview: establishes the relationship between x and V. (c) Assume oxide thickness of 10 nm, channel length of 0.25 m, electron mobility of 300 cm 2 /Vsec. Also assume that threshold voltage is 0.5 volts and the applied gate voltage is 1.5 volts. For V D = 0.1, 0.3, ….1.5 volts, plot (it should require no more than 510 lines of MATLAB code). (i) V(x) vs. x (ii) Q(x) vs. x (iii) E(x) vs. x Identify the pinch off regions in these plots. Check to see that the product Q* µ n E in each segment is the same (because current must be continuous). (d) Determine the maximum frequency of oscillation for the MOSFET described in part (c) at V D =1.2 volts. Remember to use the correct formula (velocity saturation vs. square law) by comparing the approximate magnitude of the channel electric field with Fig. 6.3 of Advanced Semiconductor Fundamentals....
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 Spring '08
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 Transistor, potential drop, Threshold voltage, Jt, Assume oxide thickness, channel direction

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