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Unformatted text preview: mEE 606: Solid State Devices Homework 5 Equilibrium Recombination Generation/Transport 1. Solve problems 5.5, 5.6, 5.7, 6.4, and 6.7 from the textbook. 2. The following question is taken from www.nanohub.org . The purpose of these exercises is to familiarize you with minority carrier diffusion in semiconductors. Recall that for a uniformly doped, p-type semiconductor with a uniform electron-hole generation rate of G elecron-hole pairs /cm 3 .s, the excess minority carrier (electron) density is, n = G n , where n is the minority carrier lifetime. Now consider a semiconductor as shown below. Assume that the electron-hole generation rate is G for x 0 and that the contact at x = L is specified by a minority carrier surface recombination velocity, S n . Our objective is to determine the n ( x ) profile for x &gt; 0 . We will do this with the computer simulation tool, Drift-Diffusion Lab, on www.nanoHUB.org, but before doing a computer simulation, we should always know what to expect, so we begin with an analytical calculation. should always know what to expect, so we begin with an analytical calculation....
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- Spring '08