ee606_s09_hw4

ee606_s09_hw4 - EE 606: Solid State Devices Homework 4:...

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EE 606: Solid State Devices Homework 4: Equilibrium Carrier Statistics 1. Solve 4.7, 4.11(a,c), 4.13, and 4.20. 2. Review problem based on Chapters 1 4 . Note : There are no exact numerical answers to this problem. I want to see if you can connect the ideas together to calculate electronic properties of any new material . So show your work and make sure that you understand these connections explicitly. One of your friends (who has not taken EE 606 &) says that he is trying to build a new transistor with a material called C 60 . He tells you that the material forms a FCC lattice with 60 carbon atoms at each Bravais lattice points. He has found the following figures and tables from a book in the library. He wants you to help him to (a) calculate intrinsic carrier concentration (n i ) of this material and (b) Determine the conductivity of the material if he could dope the material with Nitrogen at the level of 1x10 18 cm 3 . Material Properties and lattice structure of C 60
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Y axis is energy in [eV]
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Outline of the solution: ! Draw a band diagram: no numbers yet, but put down E c , E v , E i =E F lines. ! Next think about what you would need to know to compute intrinsic concentration n
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This note was uploaded on 01/27/2010 for the course ECE 606 taught by Professor Staff during the Spring '08 term at Purdue.

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ee606_s09_hw4 - EE 606: Solid State Devices Homework 4:...

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