ee606_s09_hw4

# ee606_s09_hw4 - EE 606: Solid State Devices Homework 4:...

This preview shows pages 1–4. Sign up to view the full content.

EE 606: Solid State Devices Homework 4: Equilibrium Carrier Statistics 1. Solve 4.7, 4.11(a,c), 4.13, and 4.20. 2. Review problem based on Chapters 1 4 . Note : There are no exact numerical answers to this problem. I want to see if you can connect the ideas together to calculate electronic properties of any new material . So show your work and make sure that you understand these connections explicitly. One of your friends (who has not taken EE 606 &) says that he is trying to build a new transistor with a material called C 60 . He tells you that the material forms a FCC lattice with 60 carbon atoms at each Bravais lattice points. He has found the following figures and tables from a book in the library. He wants you to help him to (a) calculate intrinsic carrier concentration (n i ) of this material and (b) Determine the conductivity of the material if he could dope the material with Nitrogen at the level of 1x10 18 cm 3 . Material Properties and lattice structure of C 60

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Y axis is energy in [eV]
Outline of the solution: ! Draw a band diagram: no numbers yet, but put down E c , E v , E i =E F lines. ! Next think about what you would need to know to compute intrinsic concentration n

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

## This note was uploaded on 01/27/2010 for the course ECE 606 taught by Professor Staff during the Spring '08 term at Purdue.

### Page1 / 4

ee606_s09_hw4 - EE 606: Solid State Devices Homework 4:...

This preview shows document pages 1 - 4. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online