ece340Spring04HW3Sol - ECE 340 Homework III Due Wednesday...

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ECE 340 Homework III Spring 2004 Due: Wednesday, February 04, 2004 1. (a) It was mentioned in Section 3.2 that the covalent bonding model gives false impression of the localization of carriers. As an illustration, calculate the radius of the electron orbit around the donor in Fig. 3-12c, assuming a ground state hydrogen-like orbit in Si. Compare with the Si lattice constant. Use m n * = 0.26 m o for Si. (b) Repeat part (a) for the radius of an electron orbiting around the donor in GaAs, assuming m n * = 0.067 m o for GaAs. Compare the radius with the GaAs lattice constant. (c) Refer to part (a) and estimate the donor binding energy for Si. Compare your results to the donor levels of simple donors such as P, As and Sb as shown in Fig. 4-9 (page 119). Solutions: (a), Use equation (2-10) from the book, radius of electron orbit can be calculated by: 22 2 n Kn r mq = = , 0 4 r K πεε = , For Si, ε r = 11.8, m: use effective mass m n * Because we assume ground state hydrogen-like orbit, n = 1: 2 34 12 2 9 1 31 19 2 6.63 10 4 8 . 8 51 0 1 1 .
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This note was uploaded on 01/28/2010 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.

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ece340Spring04HW3Sol - ECE 340 Homework III Due Wednesday...

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