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ece340Spring04hw5sol

# ece340Spring04hw5sol - ECE 340 Homework V Spring 2004 Due...

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ECE 340 Homework V Spring 2004 Due: Friday, February 13, 2004 (30 points total) 1. (a) Construct a semi-logarithmic plot such as Fig. 4-7 for Si doped with 4x10 16 /cm 3 donors and having 4x10 14 EHP/cm 3 created uniformly at t = 0. Assume that τ n = τ p = 2 μs. How much time is needed before the minority carrier concentration equals the intrinsic carrier concentration? (b) Calculate the recombination coefficient α r for part (a). Assume that this value of α r applies when the Si sample is uniformly exposed to a steady-state optical generation rate g op = 10 20 EHP/cm 3 -s. Find the steady-state excess carrier concentration n = p. (c) Repeat part (b) to find the steady-state excess carrier concentration n = p for g op = 1x10 22 EHP/cm 3 -s. Determine the percentage of error if one simply uses eq. 4-14 to calculate the steady-state excess carrier concentration. Solution: (a) 16 3 0 4 10 n cm = × , 0 0 p n ± , 0 n p n δ δ = ± , this is a low-level injection situation.

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