ece340Spring04hw5sol - ECE 340 Homework V Spring 2004 Due:...

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ECE 340 Homework V Spring 2004 Due: Friday, February 13, 2004 (30 points total) 1. (a) Construct a semi-logarithmic plot such as Fig. 4-7 for Si doped with 4x10 16 /cm 3 donors and having 4x10 14 EHP/cm 3 created uniformly at t = 0. Assume that τ n = p = 2 μs. How much time is needed before the minority carrier concentration equals the intrinsic carrier concentration? (b) Calculate the recombination coefficient α r for part (a). Assume that this value of r applies when the Si sample is uniformly exposed to a steady-state optical generation rate g op = 10 20 EHP/cm 3 -s. Find the steady-state excess carrier concentration n = p. (c) Repeat part (b) to find the steady-state excess carrier concentration n = p for g op = 1x10 22 EHP/cm 3 -s. Determine the percentage of error if one simply uses eq. 4-14 to calculate the steady-state excess carrier concentration. Solution: (a) 16 3 0 41 0 nc m , 00 p n ± , 0 np n δ = ± , this is a low-level injection situation.
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This note was uploaded on 01/28/2010 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.

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ece340Spring04hw5sol - ECE 340 Homework V Spring 2004 Due:...

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