ece340Spring04hw13Sol - ECE 340 Homework XIII Due:...

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ECE 340 Homework XIII Spring 2004 Due: Wednesday, April 07, 2004 1. Redraw Fig. 7-3 for an n + -p-n transistor, and explain the various components of carrier flow and current directions. 2. Sketch the energy band diagram for an n-p-n transistor in equilibrium (all terminals grounded) and also under normal active bias (emitter junction forward biased, collector junction reverse biased). With the emitter terminal grounded, determine the signs (positive or negative) of the collector voltage V CE and base voltage V BE , relative to the emitter, that correspond to normal bias.
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3. A symmetrical p + -n-p + Si bipolar transistor has the following properties: Emitter/Collector B a s e A = 1 0 -4 cm 2 N a = 10 18 /cm 3 N d = 10 16 /cm 3 W b =1 μm τ n = 0.1 μs τ p = 10 μs μ p = 100 cm 2 /V-s μ n = 1060 cm 2 /V-s μ n = 350 cm 2 /V-s μ p = 380 cm 2 /V-s (a) Determine if the straight-line approximation can be applied to evaluate the excess carriers in the base region. (b) With V EB = 0.5 V and V CB = - 3 V, calculate the base current I B , assuming perfect emitter injection efficiency.
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This note was uploaded on 01/28/2010 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.

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ece340Spring04hw13Sol - ECE 340 Homework XIII Due:...

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