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ece340Spring04HW16Sol

ece340Spring04HW16Sol - ECE 340 Homework XVI Due Wednesday...

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ECE 340 Homework XVI Spring 2004 Due: Wednesday, April 28, 2004 1. For an n-channel Si MOSFET with an oxide thickness d=100 Å, a channel mobility μ n = 800 cm 2 /V-s, Z=100 μm, and L=5 μm, determine the threshold voltages for N a = 10 15 and 10 17 /cm 3 , respectively. Calculate and tabulate I D (V D ,V G ) in the linear region at 300 K. Allow V D to take on values of 0.1, 0.2, 0.4, 0.6, 0.8, 1.0, and 2.0V for V G =2, 3, 4, and 5 V. Assume that Q i = 10 12 qC/cm 2 . Also, determine I D sat in the saturation region for each gate bias and doping. Assume the gate material is n+ poly. Solution: Assume the gate material is n+. (At present, most practical gate is made from poly n+.) 0.0259ln a F i N n φ = , 14 7 2 8 3.9 8.85 10 3.45 10 / 100 10 i i C F cm d ε × × = = = × × , 2 d s F a Q q N ε φ = − You can look up the Fig 6-17 to get ms Φ , or by assuming n+ material have E F at E C: 0.55 ms F φ Φ = − 2 i d T ms F i i Q Q V C C φ = Φ + (please notice that Q d is negative here). N a (cm -3 ) F φ (V) d Q (C/cm 2 ) ms Φ (V) V T (V) 10 15 0.288 8 1.38 10 × 0.9 0.748 10 17 0.407 7 1.65 10 × 1.05 0.0715

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