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ece340Spring04HW17sol

# ece340Spring04HW17sol - ECE 340 Homework XVII Due Monday...

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ECE 340 Homework XVII Spring 2004 Due: Monday, May 3, 2004 1. On a semi-insulating GaAs substrate a lightly n-type doped GaAs is epitaxially grown, and an MESFET with a gate length of 3 μm is fabricated. (In practice, ion implantation instead of epitaxial growth is used to realize MESFET devices to reduce the cost.) The epitaxial layer is 0.5 μm thick and has a doping concentration of 3x10 16 /cm 3 . Assume that the Schottky barrier is 0.8V and gate width is 100 μm. Given n i = 2x10 6 /cm 3 , μ n = 6000 cm 2 /V-s at room temperature a gate width Z=100 μm, and the relative dielectric constant for GaAs is 13.2. (a) Determine the drain voltage, V D , required to pinch off the channel for V G = 0 V and (b) estimate the channel current for V D = 0.1 V and V G = 0 V and (c) estimate the saturation current for V G = 0 V where V G is the gate voltage, and (d) estimate the saturation current for V G = -5 V. (a), Refer to fig 6-7, the MESFET is very similar to a typical JFET. The gate voltage is applied only on one side of the channel. Pinch off happen when the channel width at drain is zero.

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