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ECE 340
Homework XVIII
Spring 2004
Due: Exercise only
1.
A symmetric pn junction of area 5cm x 5cm has rectifying IV characteristics such that I=I
th
[exp(qV/kT) –
1], where I
th
= 12 nA. Assume that the minority carrier diffusion lengths L
n
=L
p
=2 μm in each side of the
junction, and the depletion width is 1 μm.
Upon solar illumination in a clear day an optical generation rate
of 2x10
18
EHP/cm
3
is obtained uniformly at least one diffusion length deep into each side of the neutral
region as well as within the depletion region. (a) Calculate the shortcircuit current and the opencircuit
voltage for this illuminated junction. (b) Plot the IV curve for this solar cell. Repeat part (a) when some
clouds block the sun and the optical generation rate reduces to a half.
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This note was uploaded on 01/28/2010 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.
 Spring '08
 Staff

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