ECE 340 Homework XVIII Spring 2004 Due: Exercise only 1. A symmetric p-n junction of area 5cm x 5cm has rectifying I-V characteristics such that I=Ith[exp(qV/kT) –1], where Ith= 12 nA. Assume that the minority carrier diffusion lengths Ln=Lp=2 μm in each side of the junction, and the depletion width is 1 μm. Upon solar illumination in a clear day an optical generation rate of 2x1018EHP/cm3is obtained uniformly at least one diffusion length deep into each side of the neutral region as well as within the depletion region. (a) Calculate the short-circuit current and the open-circuit voltage for this illuminated junction. (b) Plot the I-V curve for this solar cell. Repeat part (a) when some clouds block the sun and the optical generation rate reduces to a half. Solutions:
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P-n junction, Short circuit, open circuit voltage, optical generation rate, 0Volt