q2soln_09

q2soln_09 - EECE 254 Section 2 Quiz 2, Module 1] 1. What is...

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Unformatted text preview: EECE 254 Section 2 Quiz 2, Module 1] 1. What is your student number [please PRINT)? [5%] 2. What is your name [please PRINT)? [5%] 3. A pn-diode has a built-in voltage of 1.0 V, and a depletion capacitance ofX farads when in open-circuit. What is the value of the depletion capacitance when a forward bias of 10 V is applied to the diode?[2 0%] Cd‘ r>¢S>~>< 4. Consider a silicon pn-junction diode doped with only acceptors on the p-side " concentration NA, and only donors on the n-side to a concentration ofND. The equilibrium charge density distribution at 300 K on either side of the metallurgical junction (at x=0] is depicted below. a. Indicate on the graphic above which side is n—type and which side is p- type. Also, indicate which side is more heavily doped? Briefly state why you made the assignments you did. [10%) n_tJPL rem-Q lumle b. If N921017 cm‘3 on the n-type side of the device, estimate the conductivity ofthe n-type side of the device at 300 K.[10%] C01Ja(4rV|fJ 2: :1 EL..— om c. Which carrier dominates the reverse saturation current [holes or electrons]? Estimate the reverse saturation current for the diode assuming that all of this current is carried by the dominant carrier. Assume Ln=Lp=10 um and the junction area is 104 um2.(10%] lg was flxrr‘tcl be are Mama Careers; M an ac «— Hw— Mate— \S Mot-Clo. More: Qigkdfl 40%}; “fine. Mi WK“ Carr“ ‘5 0" Hm»? Sick- w.“ &om;mtx{-¢ 13. 13 r-g’ A‘UV'L (En (, no“. +l\o~+ K} it was run- gift—A) Ln NA lTl-Mn. Fm. +5»: mash-Kr is. \D‘Kifcl no NA ' 5. Consider a cube-shaped sample of uniformly doped silicon at 300 K in which the equilibrium hole concentration is 1011cm'3. Metal electrodes cover two opposite sides of the sample. If the sample is heated or illuminated non- uniformly (close to one of the electrodes], and no voltage is applied, would you expect to observe a voltage difference between the two electrodes? Explain.[10%) * non -ULflIqu‘m e- _ CfL‘l‘k‘IDR in (P %(&6.\‘€f\i-S \'I\ fit m+LrCG‘—’QJ W‘HC‘R 1‘ +u(r\) (q-w\+§ .m “H-210: ISA;WWS®A. S‘j‘ACL no (\QN— Curran—l; CM films—.3, 0Q :QJE NWSf fimi'S’f S f. QA;‘fi3A&.¢A -_-_ __ '3 C&(l_g,r E 236 8+5 karma V mum—g . ' 6. If, for a particular junction, the acceptor concentration is 1016 /cm3 and the donor concentration is 1015 /cm3, find the junction built-in voltage. Assume m: 1010/cm3. Also, find the width of the depletion region and its extent in each of the p and n regions when the junction is reverse biased with VR=5 V. At this value of reverse bias, calculate the magnitude ofthe charge stored on either side ofthe junction. Assume the junction area is 400 umZ. [30%] l‘o 15 mtg—t IL“: . NA = «o 4...: «3 Nu 2‘0 4.13. m ate/C... A.‘ 7. Draw a schematic below showing the physical structure ofa MOSFET transistor [10%]. LOOK 01‘ #9. (ofa!- EECE 254- Section 1 Quiz 2, Module II 1. What is your student number [please PRINT]? [5%] 2. What is your name [please PRINT]? [5%] 3. A pn-diode has a built-in Voltage of 1.0 V, and a capacitance ofX farads at a reverse bias of Va: 3 V. What reverse bias must be applied to reduce the capacitance to X/ 2 farads?[20%] FF i av? 1‘5 V- (H VR /';L V0 4. A silicon pn-diode is formed with a very heavily doped p-side of 1020 cm‘3, and n-side for which the doping is much less [1015 cm*3]. Each side ofthe diode cross-sectional area is 1 mini. A forward bias of 0.75 V is applied to the diode. a. Compute the built-in voltage of the junction.[10%] NAN — logo/(ms N'D'llgb/(flj' Volvtfli‘krfr) ’NA” ’ b. Compute the width ofthe depletion region at the stated forward bias.(10%] c. What fraction ofthe depletion-region width appears on either side of the junction?[10%] 5. Given the diode equation, identify the contributions to this current ofthe flows across the depletion region due to: a. electron drift [5%] Mn? C D“ ) Ln NA b. electron diffusion [5%] .1 Ba V/wr App“ Q LnNalfl c. hole drift [5%] Al ““1( Lamb 6. Find the resistivity of [a] intrinsic silicon and [b] p~type silicon with NA=1016/Cm3. Use ni=1.5x10'19/Cm3, and assume that for intrinsic silicon un=1350 cmZ/Vs and pp=480 cmZ/Vs and for the doped silicon pn21110 cmZ/Vs and pp=400 cmZ/Vs. [20%] U70 {‘2 l , nt-i.’r:r\ qUJ/MP f/l/L‘n) 7. Briefly explain how a MOSFET transistor operates (10%]. Pleofic See. ‘t‘LL KotLSv ...
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q2soln_09 - EECE 254 Section 2 Quiz 2, Module 1] 1. What is...

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