Lecture_3_MEMS_09 - MEMS/NEMS LECTURE #3 Fundamental...

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MEMS/NEMS LECTURE #3 Fundamental processes: CMOS and LIGA Example of a multi-user technology Modeling of MEMS
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Content of the presentation Transistor and resistor fabrication steps LIGA process Designing with MUMPS Post-processing Active structures The issues related to the design Modeling of mechanical microstructures Detail of modeling Dynamic characterization of mechanical systems Natural frequency and frequency modes
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Silicon Transistor and Resistor Fabrication Flow
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Top view of n-type silicon wafer n-type silicon wafer Cross-sections of the silicon wafer are shown below. 1. WAFER PREPARATION Use n-type silicon wafers. Identify wafers. Scribe ID numbers. Measure and record rezistivity. Clean wafers – acid clean . Silicon Transistor Fabrication Flow
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n-type silicon wafer silicon dioxide INITIAL OXIDATION Oxide Growth. Temp = 1050 C, Time = 120 min Inspect Wafers Measure and record oxide thickness Masking for diffusion
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3. FIRST PHOTORESIST - Boron Windows Resist Coat (Front Side of Wafer) Spread at 600 rpm for 5 sec; dry at 6500 rpm for 40 sec. Soft Bake: 95 C for 60 sec. Exposure: 15 sec. Use Mask # 1 Development: 60 sec. Wafer Inspection Hard Bake: 105 C for 30 min. Oxide Etch Post-etch inspection Strip Resist n-type silicon wafer silicon dioxide photoresist n-type silicon wafer silicon dioxide photoresist n-type silicon wafer silicon dioxide Silicon Transistor Fabrication Flow
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BORON DEPOSITION AND DIFFUSION Clean wafers. Acid clean. Dehydration bake: 200 C for 40 min. Apply boron spin-on-glass Spread at 600 rpm for 5 sec; dry at 3000 rpm for 20 sec. Bake spin-on-glass: 200 C for 20 min. Deposition diffusion: 1050 C for 60 min in dry oxygen. Partial glass removal (use pilot wafers as a guide) Inspect wafers Measure and record sheet resistance on pilot wafers. Diffusion drive-in: 1050 C for 60 min in wet N 2 . Inspect wafers Measure and record sheet resistance on pilot wafers. n-type silicon wafer silicon dioxide boron diffusion n-type silicon wafer silicon dioxide boron deposition Boron diffusion
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SECOND MASK – Gate Oxide Windows Coat (front side of wafer) Spread at 600 rpm for 5 sec; dry at 6500 rpm for 40 sec. Soft bake: 95 C for 60 sec. Exposure: 15 sec. Use Mask # 2. Development: 60 sec. Wafer inspection Hard bake: 105 C for 30 min. Oxide etch Post-etch inspection Strip resist n-type silicon wafer Gate oxide pattern preparation
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GATE OXIDATION Clean wafers. Acid clean. Oxide deglaze: 40:1 HF for 15 sec. Gate oxidation: 1050 C for 30 min in dry oxygen. Inspect wafers
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This note was uploaded on 02/08/2010 for the course MECHANICAL 6537 taught by Professor Stiharu during the Winter '10 term at Concordia Canada.

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Lecture_3_MEMS_09 - MEMS/NEMS LECTURE #3 Fundamental...

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