Unformatted text preview: on a piece of Ge which has an electron affinity of 4.00 eV, an intrinsic carrier concentration at 300K of 2.5 x 10 13 /cm 3 , and that is doped with 1.0 x 10 16 donors/cm 3 . Assume an ideal contact. (a) What is the work function in the Ge? (b) Is this a Schottky barrier or an ohmic contact? (c) & (d): repeat parts (a) and (b) assuming that the Ge is doped with 1.0 x 10 16 acceptors/cm 3 . Take the intrinsic Fermi level as being precisely mid gap in the Ge. Neglect tunneling through any barrier and assume that any barrier over a few k B T in height is a significant barrier....
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This note was uploaded on 02/09/2010 for the course EE 339 taught by Professor Banjeree during the Fall '08 term at University of Texas.
 Fall '08
 Banjeree

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