ENGRI1110_Lect25_Oct28_posted

ENGRI1110_Lect25_Oct28_posted - Both materials used for...

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Engineering Majors Information Fair Monday, November 2nd from 4:00 - 5:30 PM Duffield Hall Atrium Umbach Office hours Wednesday: 4:30-5:30 Thursdays: 11:35-12:35 (weekly tutorial) Fridays: 11:15-12:30
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Thermal Stresses Thermal Stresses σ E f ( α f α s ) (T 0 – T f ) For Heating: (T 0 – T f ) < 0 If α f < α s σ > 0: stress is tensile If α f > α s σ < 0: stress is compressive α f < α s α f > α s substrate film T
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Release of Thermal Stresses Release of Thermal Stresses Tensile Stress Compressive Stress Cracked Film
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Materials that strain elastically under an applied electric field Strain is due to presence of electric dipoles Piezoelectrics: ceramic material with no net dipole in unstrained material Ferroelectrics: ceramic material with spontaneous net electric dipole
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Unformatted text preview: Both materials used for actuators, resonators Memory applications for ferroelectrics p.644-646 (Ch. 18.24, 18.25) www.d-nanodev.riec.tohoku.ac.jp DRAM & FeRAM DRAM & FeRAM • Dynamic Random Access Memory – DRAM – Data are stored in capacitors – Each bit stored in one capacitor (+transistor) – High density – Leaky – capacitor charge needs refreshing periodically • Ferroelectric Random Access Memory • FeRAM – Non volatile – retains states without power Structure of Ferroelectric Materials Structure of Ferroelectric Materials BaTiO BaTiO 3 Ba (Pb etc) O Ti Random & Oriented Random & Oriented Electrical Moments Electrical Moments Before poling After poling, No applied field After poling, With applied field...
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This note was uploaded on 02/10/2010 for the course ENGRI 1110 at Cornell.

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ENGRI1110_Lect25_Oct28_posted - Both materials used for...

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