ENGRI1110_Lect5_Sept7_09_posted - Device Scaling Good news...

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Unformatted text preview: Device Scaling Good news Smaller devices mean faster devices Smaller devices can be lower power if operating voltages also get smaller Bad news Time for current to move through metal interconnects is getting longer as devices get smaller Thinner gate oxide means leakage and more off-state power consumption d V G V D V=0 V G is voltage applied to gate V T is threshold voltage Gate voltage needed to turn on MOSFET Between 0.5 and 2 volts V D is drain voltage The source and body of the MOSFET are at ground potential (V=0) V G and V D are a few volts in normal operation I D is drain current 7 layers of interconnects Molecular Electronics: Pros and Cons MOSFET Technology MOSFET is larger than nanowires High cost for fabrication Molecular Technology Molecular switch is smaller than wire crossing Lower cost for patterning, materials Nano-scale logic can solve interconnect problem Reliability? Cross bar pattern of metal lines Control flow of current at intersections of cross bars...
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ENGRI1110_Lect5_Sept7_09_posted - Device Scaling Good news...

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