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ECE3080_Homework7 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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ECE 3080A: Homework #7 Due Date: November 23, 2007 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Fall Semester 2007, Homework #7 Homework Due Date: Friday, November 23, 2007 1. MOSFET DC Characteristics: (20 points) An ideal p-channel MOSFET has the following parameters: W = 15 μm, μ p = 300 cm 2 /V-s, L = 1.5 μm, x o = 350 Å, V T = -0.8 V. (a) Plot I D versus V SD for V V SD 5 0 ! ! and for V SG = 0, 1, 2, 3, 4 and 5V. Indicate on each curve V SD (sat). Note that V SD = - V DS , V SG = - V GS (b) Plot I D versus V SG for V SD = 0.1V, and for V V SG 5 0 ! ! . 2. MOSFET: I-V Characteristic: (20 points) Consider an ideal n-channel MOSFET with parameters L = 1.25 μm, μ n = 650 cm 2 /Vs, C O = 6.9 x 10 -8 F/cm 2 , and V T = 0.65 V. Design the channel width Z such that I D,sat = 4 mA for V G = 5 V. 3. MOSFET AC Characteristic: (20 points) An ideal n-channel MOSFET is characterized by the following parameters: W = 50 μ m, L = 5 μ m, x o = 0.05 μ m, N A = 10 15 cm -3 , and μ n = 800 cm 2 /V-sec.
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