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ECE3080_Homework6

# ECE3080_Homework6 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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ECE 3080A: Homework #6 Due Date: November 12, 2007 Page 1 of 3 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Fall Semester 2007, Homework #6 Homework Due Date: Monday, November 12, 2007 1. BJT: Dynamic Behavior (15 points) The common emitter output characteristic of a pnp BJT at room temperature is shown below. The simplified Hybrid-Pi equivalent circuit is to be used in modeling the low- frequency ac response of the transistor. Suppose I B = 5 μA and V EC = 10 V at the dc operating point. Determine the values of g m and r π to be employed in the Hybrid-Pi model. 2. BJT: Frequency Limitation (10 points) In a particular bipolar transistor, the base transit time is 20 percent of the total delay time. The base width is 0.5 μm and the base diffusion coefficient is D B = 20 cm 2 /s. Determine the cut-off frequency. 3. MS-Contact: Properties: (20 points)

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ECE3080_Homework6 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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