ECE3080_Homework3

# ECE3080_Homework3 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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ECE 3080A: Homework #3 Due Date: October 3, 2007 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Fall Semester 2007, Homework #3 Homework Due Date: Wednesday, October 3, 2007 1. Carrier Transport: Continuity Equation (40 points) Assume a 1-dimensional silicon crystal, which has been doped with 10 16 cm -3 arsenic atoms. Using a light source, 10 14 cm -3 additional electron-hole pairs are generated at x = 0 in steady state (dp/dt = dn/dt = 0). (a) Can we consider low-level injection or do we have to assume high-level injection? Justify your answer. (b) Calculate analytical expressions for the minority carrier distribution p n (x) in steady state for x > 0 for the following two cases: (i) Infinitely long semiconductor with p n (x= ) = p n0 (see sketch (i)) (ii) Semiconductor with length W and p n (x=W) = p n0 (see sketch (ii)) (c) In case of the semiconductor with length W: give an approximate solution of the

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• Spring '08
• CITRIN
• P-n junction, ECE 3080A, GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL, minority carrier distribution

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