ECE3080_Homework4

# ECE3080_Homework4 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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ECE 3080A: Homework #4 Due Date: Oct. 17, 2007 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Fall Semester 2007, Homework #4 Homework Due Date: Wednesday, October 17, 2007 1. PN Junction: Reverse-Bias Junction Capacity (20 points) The reverse-bias junction capacity of a silicon step junction has been measured for two applied voltages. The result is 43.4 nF/cm 2 at V A = -3 V and 27.6 nF/cm 2 at V A = -10 V (a) Calculate the built-in potential V bi . (b) Calculate the substrate doping N B . Given are the elementary charge q = 1.6·10 -19 C and the dielectric constant for silicon ε = K S ε 0 = 11.9 · 8.85·10 -14 F/cm. 2. PN Junction: Reverse-Bias (20 points) A GaAs pn-junction at T = 300 K has impurity doping concentrations of N A = 10 16 cm -3 and N D = 5 10 16 cm -3 . For a device application, the ratio of junction capacitances at two values of reverse bias voltage must be C

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## This note was uploaded on 02/17/2010 for the course ECE 3025 taught by Professor Citrin during the Spring '08 term at Georgia Institute of Technology.

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ECE3080_Homework4 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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