hwk8sol - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF...

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ECE 3080A: Homework #8, Solutions December 3, 2007 Page 1 of 3 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Spring Semester 2007, Homework #8 SOLUTIONS 1. MOSFET Scaling: (30 points) Apply constant-field scaling to the ideal current voltage relations in both the saturation and non-saturation (linear/nonlinear) bias regions. (a) How does the drain current scale in each bias region? (b) How does the power consumption per device scale in each bias region?
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ECE 3080A: Homework #8, Solutions December 3, 2007 Page 2 of 3 2. Optoelectronics: Absorption Coefficient: (30 points) A sample of GaAs is 0.35 μm thick. The sample is illuminated with a light source with h ! = 2 eV. (a) Determine the absorption coefficient. (b) Determine the percentage of light that is absorbed in the sample. (c)
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This note was uploaded on 02/17/2010 for the course ECE 3025 taught by Professor Citrin during the Spring '08 term at Georgia Institute of Technology.

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hwk8sol - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF...

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